Flash memory and method for manufacturing the same
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United States of America Patent
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May 31, 2011
Grant Date -
Mar 19, 2009
app pub date -
Nov 13, 2008
filing date -
Nov 9, 2005
priority date (Note) -
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Abstract
Provided are a flash memory and a method for manufacturing the same. The flash memory includes a semiconductor substrate having a device isolation region and an active region; a stacked gate on the semiconductor substrate; an insulation layer covering the semiconductor substrate and the stacked gate; a drain contact penetrating the insulation layer on one side of the stacked gate; and a source line penetrating the insulation layer on an opposite side of the stacked gate.
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