Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11302828
APP PUB NO 20210151609A1
SERIAL NO

17084163

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Abstract

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A semiconductor device includes a memory cell which is configured of a FinFET having a split-gate type MONOS structure, the FinFET has a plurality of source regions formed in a plurality of fins, and the plurality of source regions are commonly connected by a source line contact. Further, the FinFET has a plurality of drain regions formed in the plurality of fins, the plurality of drain regions are commonly connected by a bit line contact, and the FinFET constitutes a memory cell of 1 bit.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Takashi Tokyo, JP 411 4889
Hisamoto, Digh Tokyo, JP 104 1361
Kawashima, Yoshiyuki Tokyo, JP 79 574

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