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Abstract

A semiconductor memory device with a tree-type capacitor having increased area for reliable storage thereon of electrical charges representative of data. The tree-type capacitor includes a storage electrode including a trunk-like conductive layer and at least a branch-like conductive layer. The trunk-like conductive layer is electrically coupled to one of the source/drain regions of a transfer transistor in the semiconductor memory device and extends substantially upright. The branch-like conductive layer has one end connected to the trunk-like conductive layer and can be structured in various shapes that allow the branch-like conductive layer to have an increased surface area. A dielectric layer is formed over exposed surfaces of the trunk-like conductive layer and the branch-like conductive layer. An overlaying conductive layer is formed over the dielectric layer and serves as an opposing electrode for the tree-type capacitor.

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First Claim