Electronic device and method for fabricating the same

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United States of America Patent

PATENT NO 11665912
SERIAL NO

17204822

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Abstract

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An electronic device may include a semiconductor memory structured to include a plurality of memory cells, wherein each of the plurality of memory cells may comprise: a first electrode layer; a second electrode layer; and a selection element layer disposed between the first electrode layer and the second electrode layer to electrically couple or decouple an electrical connection between the first electrode layer and the second electrode layer based on a magnitude of an applied voltage or an applied current with respect to a threshold magnitude, wherein the selection element layer has a dopant concentration profile which decreases from an interface between the selection element layer and the first electrode layer toward an interface between the selection element layer and the second electrode layer.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ha, Tae Jung Icheon-si, KR 18 27
Song, Jeong Hwan Icheon-si, KR 23 69

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