Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure

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United States of America Patent

PATENT NO 7648874
SERIAL NO

11339416

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Abstract

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In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Jae-Hyoung Gyeonggi-do, KR 55 906
Kim, Sung-Tae Seoul, KR 122 2262
Kim, Young-Sun Gyeonggi-do, KR 191 3257
Kim, Yun-Seok Seoul, KR 18 958
Lee, Jong-Cheol Seoul, KR 68 1630
Lim, Ha-Jin Seoul, KR 37 536
Nam, Gab-Jin Seoul, KR 30 1323
Park, Young-Geun Gyeonggi-do, KR 34 340
Yeo, Jae-Hyun Gyeonggi-do, KR 33 910
Yoo, Cha-Young Gyeonggi-do, KR 82 1587

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