Graded channel field effect transistor
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United States of America Patent
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Oct 13, 1998
Issued Date -
N/A
app pub date -
Nov 30, 1992
filing date -
Jan 10, 1991
priority date (Note) -
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Abstract
A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel.
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