Semiconductor devices having diffusion barrier regions and halo implant regions and methods of fabricating the same
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United States of America Patent
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May 15, 2007
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app pub date -
Sep 17, 2004
filing date -
Sep 18, 2003
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Abstract
The present disclosure provides an example of a semiconductor device. In addition, a method for fabricating a semiconductor device is outlined. The semiconductor device may be fabricated by providing a semiconductor substrate, forming a gate over the substrate, forming diffusion barrier ion regions, forming halo regions, forming a source, and forming a drain.
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