Light activated switching by the avalanche effect in semiconductors
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United States of America Patent
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Aug 31, 1982
Grant Date -
N/A
app pub date -
Jun 17, 1980
filing date -
Jun 17, 1980
priority date (Note) -
Expired
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Abstract
A body of semiconductor material is biased with multi-kilovolt voltage to establish an electric field approaching the dielectric breakdown field for the semiconductor material. Low level optical energy, such as a laser pulse in the nano-joule range produces free carriers in the semiconductor which multiply in the presence of the electric field to produce avalanche conduction through the semiconductor body thereby switching the multi-kilovolt voltage in precise timed (picosecond) relationship with the application of the optical energy and with high switching or turn on sensitivity.
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