Resist composition for liquid immersion exposure process and method of forming resist pattern therewith

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United States of America Patent

PATENT NO 7264918
APP PUB NO 20060154170A1
SERIAL NO

10546529

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.

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Patent Owner(s)

  • TOKYO OHKA KOGYO CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endo, Kotaro Kanagawa, JP 66 580
Hirayama, Taku Kanagawa, JP 53 547
Ogata, Toshiyuki Kanagawa, JP 69 474
Sato, Mitsuru Kanagawa, JP 275 5350
Tsuji, Hiromitsu Kanagawa, JP 11 107
Yoshida, Masaaki Kanagawa, JP 88 1111

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