Semiconductor device having buried gate structure and method for fabricating the same

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United States of America Patent

PATENT NO 11935792
APP PUB NO 20230282518A1
SERIAL NO

18316244

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Abstract

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A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a lower gate, which partially fills the trench, over the gate dielectric layer, forming a low work function layer over the lower gate, forming a spacer over the low work function layer, etching the low work function layer to be self-aligned with the spacer in order to form vertical gate on both upper edges of the lower gate, and forming an upper gate over the lower gate between inner sidewalls of the vertical gate.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Dong-Soo Gyeonggi-do, KR 90 673
Kwon, Se-Han Gyeonggi-do, KR 13 293

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