Semiconductor device and boost circuit

United States of America Patent

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Nov 3, 2009
Grant Date
Oct 26, 2006
app pub date
Mar 22, 2006
filing date
Mar 22, 2005

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Abstract

A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.

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Patent Owner(s)

SEIKO EPSON CORPORATION

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H03K:PULSE TECHNIQUE

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[Patents Count]

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Inventor Name	Address	# of filed Patents	Total Citations
Ajiki, Yoshiharu	Nagano-ken , JP	18	110

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Semiconductor device and boost circuit

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United States of America Patent

11387227

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PATENT NO	7612412
APP PUB NO	20060238222A1
SERIAL NO	11387227
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
November 03, 2009	US,7612412,B2 US7612412B2	GRANTED PATENT AS SECOND PUBLICATION
October 26, 2006	US,20060238222,A1 US20060238222A1	FIRST PUBLISHED PATENT APPLICATION

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11387227

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