Isolated semiconductor layer stacks for a semiconductor device

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United States of America Patent

PATENT NO 11545401
APP PUB NO 20210175130A1
SERIAL NO

17114826

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Abstract

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In one aspect, a method of forming a semiconducting device can comprise forming, on a substrate surface, a stack comprising semiconductor material sheets and a bottom semiconductor nanosheet; forming a trench through the stack vertically down through the bottom semiconductor nanosheet, thereby separating the stack into two substacks; selectively removing the bottom semiconductor nanosheet, thereby forming a bottom space extending under the substacks; and filling the bottom space and the trench with a dielectric material to provide a bottom isolation and formation of a dielectric wall between the substacks.

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Patent Owner(s)

  • IMEC VZW

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Boon Teik Wilsele, BE 60 128
Dentoni, Litta Eugenio Leuven, BE 10 9
Zhang, Liping Heverlee, BE 131 590

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