Integrated circuit structure and fabrication thereof
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United States of America Patent
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Sep 27, 2022
Grant Date -
N/A
app pub date -
Apr 22, 2021
filing date -
Apr 22, 2021
priority date (Note) -
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Abstract
A method includes forming a fin structure extending above a substrate; forming dummy gate structures extending across the fin structure, each of the dummy gate structures including a dummy gate electrode layer and a hard mask layer over the dummy gate electrode layer; performing an ion implantation process to dope the hard mask layers of the dummy gate structures; after performing the ion implantation process to dope the hard mask layers of the dummy gate structures, performing a first etching process to etch a source/drain region of the fin structure between the dummy gate structures to form a recess in the source/drain region of the fin structure; forming an epitaxial structure in the recess; and replacing the dummy gate structures with metal gate structures.
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