Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters
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United States of America Patent
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Jan 20, 2004
Grant Date -
Sep 26, 2002
app pub date -
Feb 21, 2002
filing date -
Mar 22, 2001
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Abstract
A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.
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