Restricted stress regions formed in the contact level of a semiconductor device
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United States of America Patent
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Sep 9, 2014
Grant Date -
Apr 4, 2013
app pub date -
Nov 28, 2012
filing date -
Nov 28, 2008
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Abstract
In sophisticated semiconductor devices, an efficient stress decoupling may be accomplished between neighboring transistor elements of a densely packed device region by providing a gap or a stress decoupling region between the corresponding transistors. For example, a gap may be formed in the stress-inducing material so as to reduce the mutual interaction of the stress-inducing material on the closely spaced transistor elements. In some illustrative aspects, the stress-inducing material may be provided as an island for each individual transistor element.
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