Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11990520
APP PUB NO 20220085174A1
SERIAL NO

17532030

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Abstract

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A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brockmeier, Andre Villach, AT 38 344
Denifl, Guenter Annenheim, AT 19 317
Kern, Ronny Finkenstein, AT 22 16
Knabl, Michael Finkenstein, AT 9 21
Piccin, Matteo Villach, AT 12 14
Santos, Rodriguez Francisco Javier Villach, AT 121 519

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