Production method of silicon carbide wafer, production method of semiconductor substrate, and production method of silicon carbide semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11795576
APP PUB NO 20210301420A1
SERIAL NO

17211962

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Provided is a production method of a SiC wafer which can increase the yield of a SiC wafer which can be prepared from a produced SiC single crystal ingot and the product yield of a semiconductor chip.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • DENSO CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hibi, Yasushi Kariya, JP 17 207
Sasayama, Kazutoshi Kariya, JP 1 0
Soltani, Bahman Kariya, JP 5 0

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Apr 24, 2027
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 24, 2031
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 24, 2035
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00