Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 20, 2004
Grant Date -
Jan 10, 2002
app pub date -
Aug 15, 2001
filing date -
Jun 5, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The vertical bipolar transistor includes an SiGe heterojunction base formed by a stack of layers of silicon and silicon-germanium resting on an initial layer of silicon nitride extending over a side insulation region surrounding the upper part of the intrinsic collector. The stack of layers also extends on the surface of the intrinsic collector which lies inside a window formed in the initial layer of silicon nitride.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully