Multi-value read-only memory cell having an improved signal-to-noise ratio
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United States of America Patent
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Oct 20, 1998
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app pub date -
Aug 11, 1997
filing date -
Feb 16, 1995
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Abstract
The invention concerns a multi-valued read-only storage location which is constructed symmetrically for storing a first or second state (M, M'') and asymmetrically for storing at least a third state (M', M'). The advantage thereof is above all that the storage capacity is doubled without notably increasing expenditure and without impairing the signal-to-noise ratio with respect to conventional storage locations. The invention is suitable for electrically programmable and mask-programmable read-only memories, in particular for those used in low voltage technology.
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