Voltage generating circuit, inverter, delay circuit, and logic gate circuit

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United States of America Patent

PATENT NO 11681313
SERIAL NO

17446302

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Abstract

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A voltage generating circuit includes a first transistor and a second transistor. Voltage of a substrate of the first transistor varies with a first parameter. The first parameter is any one of a supply voltage, an operating temperature, as well as a manufacturing process of the voltage generating circuit. A gate of the first transistor is connected to a drain of the first transistor. The substrate of the first transistor serves as an output of the voltage generating circuit. A gate of the second transistor is connected to a drain of the second transistor.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhu, Lei Hefei, CN 347 2161

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