Vertical conducting power semiconducting devices made by deep reactive ion etching

United States of America Patent

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Oct 16, 2007
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Sep 22, 2006
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Oct 24, 2002

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Abstract

The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching.

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THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Hobart, Karl D	Upper Marlboro, MD	74	2504
Kub, Francis J	Arnold, MD	108	3796

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Vertical conducting power semiconducting devices made by deep reactive ion etching

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United States of America Patent

11534310

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US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
October 16, 2007	US,7282753,B2 US7282753B2	GRANTED PATENT AS SECOND PUBLICATION
January 25, 2007	US,20070018179,A1 US20070018179A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7282753
SERIAL NO	11534310
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11534310

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