Semiconductor memory device and method for driving semiconductor memory device

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United States of America Patent

PATENT NO 8233321
APP PUB NO 20110286257A1
SERIAL NO

13197264

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Abstract

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A semiconductor memory device includes a plurality of memory cell transistors arranged in a matrix; a plurality of word lines commonly coupling the control gates of the plural memory cell transistors present in a identical first direction; a plurality of source lines commonly coupling the sources of the plural memory cell transistors present in the identical first direction; a plurality of bit lines commonly coupling the drains of the plural memory cell transistors present in a identical second direction intersecting the first direction; a first transistor having a drain coupled to the source line; a second transistor having a drain coupled to a source of the first transistor, a gate coupled to the word line and a source grounded; and a control line commonly coupling the gates of the plural first transistors.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU LIMITEDKAWASAKI-SHI KANAGAWA 211-8588

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Torii, Satoshi Shinjuku-ku, JP 52 405

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