CMOS image sensor array with black pixel using negative-tone resist support layer

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United States of America Patent

PATENT NO 7172922
APP PUB NO 20040032518A1
SERIAL NO

10223914

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A 'black' pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.

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Patent Owner(s)

  • TOWER SEMICONDUCTOR LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Benjamin, Almog Yuvalim, IL 1 27
Shevartzberg, Eyal Nazerath-Elite, IL 1 27
Wolf, Hanan Moshav Tzrufa, IL 8 121

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