Mask, method for forming a pattern, and method for evaluating pattern line width
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United States of America Patent
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-
Dec 2, 2008
Grant Date -
Jan 12, 2006
app pub date -
Nov 22, 2004
filing date -
Jul 12, 2004
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A mask having a mask pattern for properly evaluating pattern line width. A mask pattern including a pattern to be determined and a plurality of surrounding patterns is formed on a mask. Areas with the same line width in the pattern to be determined are located between a pair of surrounding patterns with an aperture rate of 0%, between a pair of surrounding patterns with an aperture rate of 50%, and between a pair of surrounding patterns with an aperture rate of 100%, respectively. These pairs of surrounding patterns with the different aperture rates change the influence of charge-up on the pattern to be determined. Accordingly, the line width of each area in the pattern to be determined is determined, the difference between the line width of two areas is found, and the amount of a determination error caused by the charge-up is calculated. As a result, whether the line width of the pattern is determined with accuracy can be judged and the line width of the pattern can be evaluated properly.
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