Method of manufacturing semiconductor devices and semiconductor devices

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United States of America Patent

PATENT NO 11784187
SERIAL NO

16934916

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Abstract

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In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region made of a semiconductor material, a first work function adjustment material layer is formed over the gate dielectric layer, an adhesion enhancement layer is formed on the first work function adjustment material layer, a mask layer including an antireflective organic material layer is formed on the adhesion enhancement layer, and the adhesion enhancement layer and the first work function adjustment material layer are patterned by using the mask layer as an etching mask. The adhesion enhancement layer has a higher adhesion strength to the antireflective organic material layer than the first work function adjustment material layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
More, Shahaji B Hsinchu, TW 217 441
Savant, Chandrashekhar Prakash Hsinchu, TW 59 203
Tsai, Chia-Ming Zhubei, TW 111 1207
Yu, Tien-Wei Kaohsiung, TW 44 292

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