Profile improvement of a metal interconnect structure on a tungsten plug
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United States of America Patent
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Jan 27, 1998
Grant Date -
N/A
app pub date -
May 19, 1997
filing date -
Feb 29, 1996
priority date (Note) -
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Abstract
A process for forming aluminum interconnect structures has been developed, that concentrates on alleviating the effects of the poor step coverage of the interconnect metallization, that develops in areas where aluminum overlies tungsten filled contact holes. A high pressure treatment of the aluminum based metallization layer is performed at pressures in the range of 50 to 120 Mega-pascal, to improve the coverage of the aluminum based layer, specifically in seams or voids in the underlying tungsten plugs.
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