Polarization mode switching semiconductor laser apparatus
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United States of America Patent
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-
Mar 5, 1996
Grant Date -
N/A
app pub date -
Jan 27, 1993
filing date -
Jan 31, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor laser apparatus includes a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a second electrode, and a pair of resonator mirrors. The semiconductor substrate has a first electrode on one surface. The first cladding layer is formed on the other surface of the semiconductor substrate. The active layer is placed on the cladding layer. The second cladding layer is placed on the active layer. The second electrode is placed on the second cladding layer. The pair of resonator mirrors are placed in a waveguide direction perpendicular to the surfaces of the semiconductor substrate to oppose each other. The active layer is constituted by a quantum well layer having a tensilely strain. The second electrode is separated into portions not less than two portions.
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