Nitride semiconductor ultraviolet light-emitting element
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United States of America Patent
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Sep 2, 2014
Grant Date -
Dec 12, 2013
app pub date -
Mar 23, 2011
filing date -
Mar 23, 2011
priority date (Note) -
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Abstract
A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough.
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