Method of doping a polycrystalline transistor channel for vertical NAND devices

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United States of America Patent

PATENT NO 9018064
APP PUB NO 20150017772A1
SERIAL NO

13938713

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Abstract

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A method of doping the polycrystalline channel in a vertical FLASH device is disclosed. This method uses a plurality of high energy ion implants to dope the channel at various depths of the channel. In some embodiments, these ion implants are performed at an angle offset from the normal direction, such that the implanted ions pass through at least a portion of the surrounding ONO stack. By passing through the ONO stack, the distribution of ranges reached by each ion may differ from that created by a vertical implant.

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Patent Owner(s)

  • VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
England, Jonathan Gerald Horsham, GB 23 452
Prasad, Rajesh Lexington, US 24 214
Waite, Andrew M Beverly, US 23 650

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