Method of making a deep junction for electrical crosstalk reduction of an image sensor
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United States of America Patent
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Sep 7, 2010
Grant Date -
Jan 17, 2008
app pub date -
Jul 10, 2006
filing date -
Jul 10, 2006
priority date (Note) -
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Abstract
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
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