Methods of manufacturing thin film transistors using masks to protect the channel regions from impurities while doping a semiconductor layer to form source/drain regions
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 17, 2007
Issued Date -
N/A
app pub date -
Jan 6, 2005
filing date -
Nov 20, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully