Method of manufacturing semiconductor device
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United States of America Patent
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Nov 20, 2018
Grant Date -
Jun 29, 2017
app pub date -
Dec 4, 2016
filing date -
Dec 28, 2015
priority date (Note) -
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Abstract
To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.
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