Semiconductor structure and manufacturing method of the same

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United States of America Patent

PATENT NO 11723219
APP PUB NO 20210249471A1
SERIAL NO

17244768

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Abstract

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The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Harry-Hak-Lay Paya Lebar Crescent, SG 358 2423
Huang, Sheng-Huang Hsinchu, TW 64 271
Kuo, Keng-Ming Yunlin County, TW 11 67
Wang, Hung Cho Taipei, TW 65 257

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