Semiconductor device having high withstand capacity and method for designing the same
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United States of America Patent
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Mar 13, 2007
Grant Date -
Feb 10, 2005
app pub date -
Jul 15, 2004
filing date -
Aug 6, 2003
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate, a low concentration region, an intermediate concentration region, the first electrode region, and the second electrode region. The device has a current-voltage characteristic having the first and second break points. The voltage of the first break point is equal to or smaller than that of the second break point. The device has a maximum current density when the device is applied with an electrostatic discharge surge. The current density of the first break point is smaller than the maximum current density, and the current density of the second break point is larger than the maximum current density.
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