Semiconductor device storage cell structure, method of operation, and method of manufacture
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United States of America Patent
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Apr 6, 2010
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app pub date -
May 1, 2007
filing date -
May 1, 2007
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Abstract
The invention can include at least one storage cell having a store gate structure formed from a semiconductor material doped to a first conductivity type and in contact with a channel region comprising a semiconductor material doped to a second conductivity type. A storage cell can also include at least a first source/drain region and a second source/drain region separated from one another by the channel region. A control gate structure, comprising a semiconductor layer doped to the first conductivity type can be formed over a substrate surface. The control gate structure can be in contact with the channel region. Such a storage cell can be more compact and/or provide longer data retention times than conventional storage cells, such as many conventional dynamic random access memory (DRAM) type cells.
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