Semiconductor device, active-matrix substrate and method for fabricating the same
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United States of America Patent
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Mar 31, 1998
Issued Date -
N/A
app pub date -
Sep 20, 1996
filing date -
Oct 31, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device formed on an insulating substrate of the present invention includes: a gate wiring provided on the insulating substrate; a first insulating film provided so as to cover the gate wiring; an upper electrode formed so as to face the gate wiring in such a manner that the first insulating film is interposed therebetween; a second insulating film provided so as to cover the upper electrode; and another electrode formed on the second insulating film, wherein the upper electrode is electrically connected to the another electrode via a contact hole formed through the second insulating film, a storage capacitor is formed of a structure including the upper electrode, the first insulating film, and the gate wiring opposing the upper electrode through the first insulating film, the upper electrode and the gate wiring have substantially the same width.
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