Semiconductor device and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11271098
APP PUB NO 20200321454A1
SERIAL NO

16904836

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Importance

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Abstract

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To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamochi, Takashi Tochigi, JP 72 785
Hosaka, Yasuharu Tochigi, JP 100 960
Iguchi, Takahiro Kanuma, JP 32 277
Jintyou, Masami Shimotsuga, JP 180 2225
Koezuka, Junichi Tochigi, JP 363 5683

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