Methods of forming alternating phase shift masks having improved phase-shift tolerance
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United States of America Patent
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Sep 4, 2007
Grant Date -
Sep 15, 2005
app pub date -
Mar 11, 2004
filing date -
Mar 11, 2004
priority date (Note) -
Expired
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Abstract
Methods for fabricating alternating phase shift masks or reticles used in semiconductor optical lithography systems. The methods generally include forming a layer of phase shift mask material on a handle substrate and patterning the layer to define recessed phase shift windows. The patterned layer is transferred from the handle wafer to a mask blank. The depth of the phase shift windows is determined by the thickness of the layer of phase shift mask material and is independent of the patterning process. In particular, the depth of the phase shift windows is not dependent upon the etch rate uniformity of an etch process across a surface of a mask blank.
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