Wide band gap semiconductor device and power conversion apparatus

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United States of America

PATENT NO 11282948
SERIAL NO

16973057

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Abstract

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Provided is a technique capable of obtaining sufficient latch-up tolerance and enabling integration. The wide band gap semiconductor device includes: a collector region, a charge storage region having an impurity concentration higher than that of the drift region, a base region, a charge extraction region having an impurity concentration higher than that of the base region, an emitter region, a Schottky electrode, a gate insulating film, a gate electrode, an emitter electrode, and a collector electrode.

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Patent Owner(s)

  • MITSUBISHI ELECTRIC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamada, Kenji Tokyo, JP 80 544
Konishi, Kazuya Tokyo, JP 27 63
Yamashiro, Yusuke Tokyo, JP 4 9

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