Vertical cavity surface emitting laser device
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United States of America Patent
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-
Mar 2, 2004
Grant Date -
Aug 1, 2002
app pub date -
May 30, 2001
filing date -
Nov 28, 2000
priority date (Note) -
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Abstract
A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.
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