Semiconductor device and method for manufacturing the same
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United States of America Patent
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Apr 6, 2010
Grant Date -
Jul 7, 2005
app pub date -
Feb 11, 2005
filing date -
Aug 30, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
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