Ion beam extractor
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United States of America Patent
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Oct 23, 2007
Grant Date -
Jul 13, 2006
app pub date -
Aug 23, 2005
filing date -
Jan 7, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.
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