Semiconductor device and manufacturing method thereof
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United States of America Patent
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Feb 27, 2007
Grant Date -
May 26, 2005
app pub date -
Nov 26, 2004
filing date -
Nov 26, 2003
priority date (Note) -
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Abstract
The semiconductor device fabrication method of the present invention includes forming metal wirings on a semiconductor substrate, forming a first blocking layer on the semiconductor substrate and the metal wiring, forming a first FSG on the first blocking layer, forming a second blocking layer on the first FSG, forming a second FSG on the second blocking layer, and forming a protection layer on the second FSG.
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