High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency

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United States of America

PATENT NO 11239107
APP PUB NO 20210013093A1
SERIAL NO

17037952

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Abstract

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A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type. The epitaxial layer is depleted by the handle substrate free carriers, thereby resulting in a high apparent resistivity, which improves the function of the structure in RF devices.

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Patent Owner(s)

  • GLOBALWAFERS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Libbert, Jeffrey L O'Fallon, US 60 578
Liu, Qingmin Glen Carbon, US 22 170
Thomas, Shawn George Chesterfield, US 31 95
Wang, Gang Grover, US 1223 7720

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