Semiconductor devices and methods of manufacturing semiconductor devices

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United States of America Patent

PATENT NO 11804438
SERIAL NO

17654486

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Abstract

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A semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 443-742

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Changhwa Hwaseong-si, KR 24 99
Siew, Yong Kong Suwon-si, KR 18 531
Tseng, Wei Hsiung Seongnam-si, KR 4 38

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