Method for forming shielding polysilicon sidewall for protecting shielded gate trench metal-oxide-semiconductor field effect transistor

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United States of America Patent

PATENT NO 11749735
APP PUB NO 20220223703A1
SERIAL NO

17146348

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Abstract

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The present application provides a method for forming a sidewall protection layer in a heavily N-type doped shielding polysilicon for reducing gate to source leakage in a shielded gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET). In the process of forming a shielding polysilicon sidewall is manufactured by using a secondary oxidation layer forming process, so as to increase a thickness of an oxide in a top region of the shielding polysilicon and a thickness of an oxide of a trench sidewall in a transition region between the shielding polysilicon and an N-type doped gate polysilicon to solve the problem of serious gate to source leakage current.

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Patent Owner(s)

  • HUAYI MICROELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hong Saratoga, US 113 1310
Su, Yi Cupertino, US 101 1324

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