Method of making magnetic material layer

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United States of America Patent

PATENT NO 4419381
SERIAL NO

06338870

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A base member is disposed in a reaction chamber and a raw material gas is introduced thereinto which contains at least a compound gas of a first magnetic material, or the compound gas of the first magnetic material and an oxidizing or nitriding gas, or the compound gas of the first magnetic material and a compound gas of a second magnetic material. A plasma generating electrical energy is applied to the raw material gas to obtain therein a stream of plasma of the raw material gas, by which a stream of active reaction products is passed over the base member. As a result of this, the first magnetic material, an oxide or nitride of the first magnetic material, or a magnetic material containing the first and second magnetic materials is deposited on the base member, forming thereon a magnetic material layer which consists principally of the first magnetic material, the oxide or nitride of the first magnetic material, or the magnetic material containing the first and second materials.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamazaki, Shunpei Tokyo, JP 7291 226813

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