Source and drain contact cut last process to enable wrap-around-contact

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United States of America Patent

PATENT NO 11757012
APP PUB NO 20200152751A1
SERIAL NO

16687736

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Importance

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Abstract

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A technique relates to a semiconductor device. A source or drain (S/D) contact liner is formed on one or more S/D regions. Annealing is performed to form a silicide layer around the one or more S/D regions, the silicide layer being formed at an interface between the S/D contact liner and the S/D regions. A block layer is formed into a pattern over the one or more S/D regions, such that a portion of the S/D contact liner is protected by the block layer. Unprotected portions of the S/D contact liner are removed, such that the S/D contact liner protected by the block layer remains over the one or more S/D regions. The block layer and S/D contacts are formed on the S/D contact liner over the one or more S/D regions.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4282
Greene, Andrew Slingerlands, US 43 285
Guo, Dechao Niskayuna, US 268 2433
Rahman, Ardasheir Schenectady, US 27 28
Robison, Robert Rexford, US 62 70
Yamashita, Tenko Schenectady, US 599 4981

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