Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path
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United States of America Patent
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Jul 15, 1980
Grant Date -
N/A
app pub date -
Dec 22, 1978
filing date -
Dec 22, 1978
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A gate turn-off device is formed by the integration of a power transistor with a lateral thyristor. The thyristor has a split emission path from its emitter, part of the emitter current completing a regenerative loop to maintain conduction after removal of a gating signal, and the remainder of the emitter current supplying base drive to the power transistor to render the latter conductive. In the ON state of the device, most of the load current flows through the power transistor, with only a small holding current flowing through the thyristor. Because of the low level of holding current, the thyristor is easily turned off by a small negative gating signal, breaking the regenerative loop, thus terminating emitter current whereby there is no base drive for the power transistor and hence the device is OFF.
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