Process for fabrication of a ferroelectric capacitor
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United States of America Patent
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Apr 3, 2007
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N/A
app pub date -
Aug 29, 2003
filing date -
Aug 29, 2003
priority date (Note) -
Expired
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Abstract
A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti 5 over an insulating layer 3 of Al.sub.2O.sub.3, and oxidising the Ti layer to form a TiO.sub.2 layer 7. Subsequently, a layer of PZT 9 is formed over the TiO.sub.2 layer 7. The PZT layer 9 is subjected to an annealing step in which, due to the presence of the TiO.sub.2 layer 7 it crystallises to form a layer 11 with a high degree of (111)-texture.
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